Ferroelectric and Dielectric Properties of Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> Thin Film Near Morphotropic Phase Boundary
نویسندگان
چکیده
Recently, based on the phase-field modeling, it was predicted that Hf1-xZrxO2 (HZO) exhibits morphotropic phase boundary (MPB) in its compositional diagram. Here, we investigate effect of structural changes between tetragonal (t) and orthorhombic (o) phases ferroelectric dielectric properties HZO films to probe existence MPB region. The analysis show by adjusting ozone dosage during atomic layer deposition process annealing conditions, different ratios t- o-phases (f_(t/o) ) were achieved which consequently affect samples. Polarization versus electric field measurements a remarkable increase characteristics (Pr Ec) sample contains minimum t-phase fraction (f_(t/o)~ 0.04). This shows lowest constant compared other samples is due formation o-phase. maximum f_(t/o)~ 0.41 demonstrates highest response. By f_(t/o), large ~ 55 achieved. Our study reveals direct relation f_(t/o) thin can be understood considering density
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ژورنال
عنوان ژورنال: Physica Status Solidi A-applications and Materials Science
سال: 2021
ISSN: ['1862-6300', '1862-6319']
DOI: https://doi.org/10.1002/pssa.202000819